1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 2sa1464 transistor (pnp) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm : -0.5 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1ma, i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =- 40 v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -4v , i c =0 -0.1 a dc current gain h fe(1) v ce =- 2v, i c = -150ma 75 140 300 dc current gain h fe(2) v ce =- 2v, i c = -500ma 20 50 collector-emitter saturation voltage v ce (sat) i c =-500 ma, i b = -50ma -0.45 -0.75 v base-emitter voltage v be (on) i c =-500ma, v ce =-50v -1.0 -1.3 v transition frequency f t v ce =-10v, i c = -20ma 150 400 mhz ouput capacitance c ob v cb =-10v, ie=-20ma 5.0 8.0 pf turn-on time t on 35 ns storage time t stg 225 ns turn-on time t off v cc =-30v i c =150ma i b1 =-i b2 =15ma 255 ns classification of h fe(1) marking y12 y13 y14 range 75-150 100-200 150-300 sot-23-3l 1. emitter 2. base 3. collector 2sa1464 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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